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cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 1/13 MTC1421G6 cystek product specification n- and p-channel enhancement mode mosfet MTC1421G6 features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? esd protected ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTC1421G6-0-t1-g tsop-6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTC1421G6 tsop-6 g gate s source d drain g1 s2 g2 d1 s1 d2 n-ch (q1) p-ch (q2) bv dss 20v -20v i d 2a(v gs =4.5v) -1.5a(v gs =-4.5v) 73m (v gs =4.5v) 170m (v gs =-4.5v) 92m (v gs =2.5v) 224m (v gs =-2.5v) r dson ( typ .) 147m (v gs =1.8v) 340m (v gs =-1.8v) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 2/13 MTC1421G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 20 -20 v gate-source voltage v gs 28 28 v t a =25 c ,v gs =4.5v(n-ch), v gs =-4.5v(p-ch) i d 2 -1.5 a continuous drain current (note 1) t a =70 c, v gs =4.5v(n-ch), v gs =-4.5v(p-ch) i d 1.6 -1.2 a pulsed drain current (note 2) i dm 8 -6 a power dissipation for single operation (note 1) pd 0.96 w operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 130 c/w thermal resistance, junction-to-case rth,jc 60 c/w note : 1.surface mounted on a 0.125 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad. 2. pulse width limited by maximum junction temperature. n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v gs =0v, i d =250 a v gs(th) 0.3 - 1.0 v v ds =v gs , i d =250 a i gss - - 10 v gs =8v, v ds =0v i dss - - 1 v ds =20v, v gs =0 i dss - - 25 a v ds =16v, v gs =0, tj=70 c - 73 95 v gs =4.5v, i d =1a - 92 130 v gs =2.5v, i d =1a *r ds(on) - 147 300 m v gs =1.8v, i d =1a *g fs - 2.5 - s v ds =5v, i d =1a dynamic ciss - 160 - coss - 27 - crss - 29 - pf v ds =10v, v gs =0, f=1mhz *t d(on) - 3.6 - *t r - 16.6 - *t d(off) - 14.4 - *t f - 5.4 - ns v ds =10v, i d =1a, v gs =4.5v, r g =6 *qg - 2.6 - *qgs - 0.36 - *qgd - 0.72 - nc v ds =10v, i d =1a, v gs =4.5v source-drain diode *i s - - 2 *i sm - - 8 a *v sd - 0.90 1.2 v v gs =0v, i s =2a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 3/13 MTC1421G6 cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0v, i d =-250 a v gs(th) -0.3 - -1.0 v v ds =v gs , i d =-250 a i gss - - 10 v gs =8v, v ds =0v i dss - - -1 v ds =-20v, v gs =0v i dss - - -10 a v ds =-16v, v gs =0, tj=70 c - 170 270 v gs =-4.5v, i d =-1a - 224 350 v gs =-2.5v, i d =-1a *r ds(on) - 340 550 m v gs =-1.8v, i d =-1a *g fs - 2.8 - s v ds =-5v, i d =-1a dynamic ciss - 204 - coss - 30 - crss - 28 - pf v ds =-10v, v gs =0, f=1mhz *t d(on) - 5.6 - *t r - 17.8 - *t d(off) - 16 - *t f - 6.4 - ns v dd =-10v, i d =-1a, v gs =-4.5v, r g =6 *qg - 2.55 - *qgs - 0.43 - *qgd - 0.61 - nc v ds =-10v, i d =-1a, v gs =-4.5v source-drain diode *i s - - -1.5 *i sm - - -6 a *v sd - -0.89 -1.2 v v gs =0v, i s =-1a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 4/13 MTC1421G6 cystek product specification typical characteristics, q1(n-channel) typical output characteristics 0 1 2 3 4 5 6 7 8 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v 10v, 9v, 8v, 7v, 6v, 5v, 4v,3v v ds , drain-source voltage(v) i d , drain current(a) v gs =2v v gs =1.5v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =1.8v v gs =2.5v v gs =4.5v v gs =3v v gs =1.5v v gs =2v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 100 200 300 400 500 600 700 800 024681 0 0 tj=25c tj=150c v gs =0v drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =1a r ds( on) @tj=25c :73m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =1a
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 5/13 MTC1421G6 cystek product specification typical characteristics(cont.), q1(n-channel) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a i d =1ma single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =130c/w gate charge characteristics 0 2 4 6 8 10 0123456 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =10v i d =1a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s ta=25c, tj=150c, v gs =4.5v, r ja =130c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =130c/w
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 6/13 MTC1421G6 cystek product specification typical characteristics(cont.), q1(n-channel) typical transfer characteristics 0 1 2 3 4 5 6 7 8 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =13 0c/w
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 7/13 MTC1421G6 cystek product specification typical characteristics, q2(p-channel) typical output characteristics 0 1 2 3 4 5 6 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage 10v, 9v, 8v, 7v, 6v, 5v,4v, 3v -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2v i d =-250 a, v gs =0v -v gs =1.5 v static drain-source on-state resistance vs drain current 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-2v v gs =-1.5v v gs =-2.5v v gs =-3v v gs =-1.8v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 012345 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 200 400 600 800 1000 1200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-1a r ds( on) @tj=25c : 170m -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-1a
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 8/13 MTC1421G6 cystek product specification typical characteristics(cont.), q1(n-channel) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) ,normalized threshold voltage i d =-250 a i d =-1ma single pulse power rating, junction to ambient 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =130c/w gate charge characteristics 0 2 4 6 8 10 0123456 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-1a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s r ds( on) limited t a =25c, tj=150c, v gs =-4.5v, r ja =130c/w single pulse maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =130c/w
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 9/13 MTC1421G6 cystek product specification typical characteristics(cont.), q1(n-channel) typical transfer characteristics 0 1 2 3 4 5 6 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-5v forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) v ds =-5v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =130 c/w
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 10/13 MTC1421G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 11/13 MTC1421G6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 12/13 MTC1421G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c832g6 issued date : 2012.09.11 revised date : 2014.10.24 page no. : 13/13 MTC1421G6 cystek product specification tsop-6 dimension millimeters inches millimeters inches dim min. max. min. max. marking: 1421 device name date code 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. gate 1 (g1) pin 2. source 2 (s2) pin 3. gate 2 (g2) pin 4. drain 2 (d2) pin 5. source 1 (s1) pin 6. drain 1 (d1) dim min. max. min. max. a 0.700 0.900 0.028 0.035 e 1.600 1.700 0.063 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 0.700 0.800 0.028 0.031 e 0.95 (bsc) 0.037 (bsc) b 0.350 0.500 0.014 0.020 e1 1.90 (bsc) 0.075 (bsc) c 0.080 0.200 0.003 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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